| Growth and Characterization of an a-Plane InxGa1-xN on a r-Plane Sapphire | |
| Zhao GJ (Zhao Gui-Juan); Li ZW (Li Zhi-Wei); Wei HY (Wei Hong-Yuan); Liu GP (Liu Gui-Peng); Liu XL (Liu Xiang-Lin); Yang SY (Yang Shao-Yan); Zhu QS (Zhu Qin-Sheng); Wang ZG (Wang Zhan-Guo) | |
| 2012 | |
| Source Publication | CHINESE PHYSICS LETTERS
 |
| Volume | 29Issue:11Pages:117103 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2013-03-26 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23777 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Zhao GJ ,Li ZW ,Wei HY ,et al. Growth and Characterization of an a-Plane InxGa1-xN on a r-Plane Sapphire[J]. CHINESE PHYSICS LETTERS,2012,29(11):117103. |
| APA | Zhao GJ .,Li ZW .,Wei HY .,Liu GP .,Liu XL .,...&Wang ZG .(2012).Growth and Characterization of an a-Plane InxGa1-xN on a r-Plane Sapphire.CHINESE PHYSICS LETTERS,29(11),117103. |
| MLA | Zhao GJ ,et al."Growth and Characterization of an a-Plane InxGa1-xN on a r-Plane Sapphire".CHINESE PHYSICS LETTERS 29.11(2012):117103. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012043.pdf（1069KB） | 限制开放 | License | Application Full Text | |||
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