SEMI OpenIR  > 中科院半导体材料科学重点实验室
Growth and Characterization of an a-Plane InxGa1-xN on a r-Plane Sapphire
Zhao GJ (Zhao Gui-Juan); Li ZW (Li Zhi-Wei); Wei HY (Wei Hong-Yuan); Liu GP (Liu Gui-Peng); Liu XL (Liu Xiang-Lin); Yang SY (Yang Shao-Yan); Zhu QS (Zhu Qin-Sheng); Wang ZG (Wang Zhan-Guo)
2012
Source PublicationCHINESE PHYSICS LETTERS
Volume29Issue:11Pages:117103
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-03-26
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23777
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Zhao GJ ,Li ZW ,Wei HY ,et al. Growth and Characterization of an a-Plane InxGa1-xN on a r-Plane Sapphire[J]. CHINESE PHYSICS LETTERS,2012,29(11):117103.
APA Zhao GJ .,Li ZW .,Wei HY .,Liu GP .,Liu XL .,...&Wang ZG .(2012).Growth and Characterization of an a-Plane InxGa1-xN on a r-Plane Sapphire.CHINESE PHYSICS LETTERS,29(11),117103.
MLA Zhao GJ ,et al."Growth and Characterization of an a-Plane InxGa1-xN on a r-Plane Sapphire".CHINESE PHYSICS LETTERS 29.11(2012):117103.
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