SEMI OpenIR  > 半导体超晶格国家重点实验室
Polarization-Driven Topological Insulator Transition in a GaN/InN/GaN Quantum Well
Miao MS (Miao, M. S.); Yan Q (Yan, Q.); Van de Walle CG (Van de Walle, C. G.); Lou WK (Lou, W. K.); Li LL (Li, L. L.); Chang K (Chang, K.)
2012
Source PublicationPHYSICAL REVIEW LETTERS
Volume109Issue:18Pages:186803
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2013-03-26
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23771
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Miao MS ,Yan Q ,Van de Walle CG ,et al. Polarization-Driven Topological Insulator Transition in a GaN/InN/GaN Quantum Well[J]. PHYSICAL REVIEW LETTERS,2012,109(18):186803.
APA Miao MS ,Yan Q ,Van de Walle CG ,Lou WK ,Li LL ,&Chang K .(2012).Polarization-Driven Topological Insulator Transition in a GaN/InN/GaN Quantum Well.PHYSICAL REVIEW LETTERS,109(18),186803.
MLA Miao MS ,et al."Polarization-Driven Topological Insulator Transition in a GaN/InN/GaN Quantum Well".PHYSICAL REVIEW LETTERS 109.18(2012):186803.
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