SEMI OpenIR  > 半导体超晶格国家重点实验室
Growth of large domain epitaxial graphene on the C-face of SiC
Zhang R (Zhang, Rui); Dong YL (Dong, Yunliang); Kong WJ (Kong, Wenjie); Han WP (Han, Wenpeng); Tan PH (Tan, Pingheng); Liao ZM (Liao, Zhimin); Wu XS (Wu, Xiaosong); Yu DP (Yu, Dapeng)
2012
Source PublicationJOURNAL OF APPLIED PHYSICS
Volume112Issue:10Pages:104307
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2013-03-26
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23766
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Zhang R ,Dong YL ,Kong WJ ,et al. Growth of large domain epitaxial graphene on the C-face of SiC[J]. JOURNAL OF APPLIED PHYSICS,2012,112(10):104307.
APA Zhang R .,Dong YL .,Kong WJ .,Han WP .,Tan PH .,...&Yu DP .(2012).Growth of large domain epitaxial graphene on the C-face of SiC.JOURNAL OF APPLIED PHYSICS,112(10),104307.
MLA Zhang R ,et al."Growth of large domain epitaxial graphene on the C-face of SiC".JOURNAL OF APPLIED PHYSICS 112.10(2012):104307.
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