SEMI OpenIR  > 半导体超晶格国家重点实验室
Depth profile of the tetragonal distortion in thick GaMnAs layers grown on GaAs by Rutherford backscattering/channeling
Zhou SQ (Zhou, Shengqiang); Chen L (Chen, Lin); Shalimov A (Shalimov, Artem); Zhao JH (Zhao, Jianhua); Helm M (Helm, Manfred)
2012
Source PublicationAIP ADVANCES
Volume2Issue:4Pages:042102
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2013-03-26
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23760
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Zhou SQ ,Chen L ,Shalimov A ,et al. Depth profile of the tetragonal distortion in thick GaMnAs layers grown on GaAs by Rutherford backscattering/channeling[J]. AIP ADVANCES,2012,2(4):042102.
APA Zhou SQ ,Chen L ,Shalimov A ,Zhao JH ,&Helm M .(2012).Depth profile of the tetragonal distortion in thick GaMnAs layers grown on GaAs by Rutherford backscattering/channeling.AIP ADVANCES,2(4),042102.
MLA Zhou SQ ,et al."Depth profile of the tetragonal distortion in thick GaMnAs layers grown on GaAs by Rutherford backscattering/channeling".AIP ADVANCES 2.4(2012):042102.
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