Knowledge Management System Of Institute of Semiconductors,CAS
Depth profile of the tetragonal distortion in thick GaMnAs layers grown on GaAs by Rutherford backscattering/channeling | |
Zhou SQ (Zhou, Shengqiang); Chen L (Chen, Lin); Shalimov A (Shalimov, Artem); Zhao JH (Zhao, Jianhua); Helm M (Helm, Manfred) | |
2012 | |
Source Publication | AIP ADVANCES
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Volume | 2Issue:4Pages:042102 |
Subject Area | 半导体物理 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2013-03-26 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/23760 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Zhou SQ ,Chen L ,Shalimov A ,et al. Depth profile of the tetragonal distortion in thick GaMnAs layers grown on GaAs by Rutherford backscattering/channeling[J]. AIP ADVANCES,2012,2(4):042102. |
APA | Zhou SQ ,Chen L ,Shalimov A ,Zhao JH ,&Helm M .(2012).Depth profile of the tetragonal distortion in thick GaMnAs layers grown on GaAs by Rutherford backscattering/channeling.AIP ADVANCES,2(4),042102. |
MLA | Zhou SQ ,et al."Depth profile of the tetragonal distortion in thick GaMnAs layers grown on GaAs by Rutherford backscattering/channeling".AIP ADVANCES 2.4(2012):042102. |
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2012012.pdf(989KB) | 限制开放 | License | Application Full Text |
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