SEMI OpenIR  > 中科院半导体材料科学重点实验室
Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots
Zhang HY (Zhang, Hongyi); Chen YH (Chen, Yonghai); Zhou GY (Zhou, Guanyu); Tang CG (Tang, Chenguang); Wang ZG (Wang, Zhanguo)
2012
Source PublicationNANOSCALE RESEARCH LETTERS
Volume7Pages:600
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-03-26
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23758
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Zhang HY ,Chen YH ,Zhou GY ,et al. Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots[J]. NANOSCALE RESEARCH LETTERS,2012,7:600.
APA Zhang HY ,Chen YH ,Zhou GY ,Tang CG ,&Wang ZG .(2012).Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots.NANOSCALE RESEARCH LETTERS,7,600.
MLA Zhang HY ,et al."Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots".NANOSCALE RESEARCH LETTERS 7(2012):600.
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