SEMI OpenIR  > 中科院半导体材料科学重点实验室
Well-width dependence of the emission linewidth in ZnO/MgZnO quantum wells
Lv XQ (Lv, Xue-Qin); Zhang JY (Zhang, Jiang-Yong); Ying LY (Ying, Lei-Ying); Liu WJ (Liu, Wen-Jie); Hu XL (Hu, Xiao-Long); Zhang BP (Zhang, Bao-Ping); Qui ZR (Qui, Zhi-Ren); Kuboya S (Kuboya, Shigeyuki); Onabe K (Onabe, Kentaro)
2012
Source PublicationNANOSCALE RESEARCH LETTERS
Volume7Pages:605
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-03-26
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23756
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Lv XQ ,Zhang JY ,Ying LY ,et al. Well-width dependence of the emission linewidth in ZnO/MgZnO quantum wells[J]. NANOSCALE RESEARCH LETTERS,2012,7:605.
APA Lv XQ .,Zhang JY .,Ying LY .,Liu WJ .,Hu XL .,...&Onabe K .(2012).Well-width dependence of the emission linewidth in ZnO/MgZnO quantum wells.NANOSCALE RESEARCH LETTERS,7,605.
MLA Lv XQ ,et al."Well-width dependence of the emission linewidth in ZnO/MgZnO quantum wells".NANOSCALE RESEARCH LETTERS 7(2012):605.
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