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Effect of High-Temperature Pregrowth Treatment on the Surface Morphology of GaInP Epilayers on Ge Grown by Metal-Organic Vapor-Phase Epitaxy | |
He, W; Lu, SL; Dong, JR; Zhao, YM; Yang, H | |
2012 | |
Source Publication | JAPANESE JOURNAL OF APPLIED PHYSICS
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Volume | 51Issue:1,Part 1Pages:15501 |
Subject Area | 半导体物理 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2013-03-20 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/23746 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | He, W,Lu, SL,Dong, JR,et al. Effect of High-Temperature Pregrowth Treatment on the Surface Morphology of GaInP Epilayers on Ge Grown by Metal-Organic Vapor-Phase Epitaxy[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2012,51(1,Part 1):15501. |
APA | He, W,Lu, SL,Dong, JR,Zhao, YM,&Yang, H.(2012).Effect of High-Temperature Pregrowth Treatment on the Surface Morphology of GaInP Epilayers on Ge Grown by Metal-Organic Vapor-Phase Epitaxy.JAPANESE JOURNAL OF APPLIED PHYSICS,51(1,Part 1),15501. |
MLA | He, W,et al."Effect of High-Temperature Pregrowth Treatment on the Surface Morphology of GaInP Epilayers on Ge Grown by Metal-Organic Vapor-Phase Epitaxy".JAPANESE JOURNAL OF APPLIED PHYSICS 51.1,Part 1(2012):15501. |
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