Effect of High-Temperature Pregrowth Treatment on the Surface Morphology of GaInP Epilayers on Ge Grown by Metal-Organic Vapor-Phase Epitaxy

	Effect of High-Temperature Pregrowth Treatment on the Surface Morphology of GaInP Epilayers on Ge Grown by Metal-Organic Vapor-Phase Epitaxy
	He, W; Lu, SL; Dong, JR; Zhao, YM; Yang, H
	2012
Source Publication	JAPANESE JOURNAL OF APPLIED PHYSICS
Volume	51 Issue:1，Part 1 Pages:15501
Subject Area	半导体物理
Indexed By	SCI
Language	英语
Date Available	2013-03-20
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/23746
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	He, W,Lu, SL,Dong, JR,et al. Effect of High-Temperature Pregrowth Treatment on the Surface Morphology of GaInP Epilayers on Ge Grown by Metal-Organic Vapor-Phase Epitaxy[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2012,51(1，Part 1):15501.
APA	He, W,Lu, SL,Dong, JR,Zhao, YM,&Yang, H.(2012).Effect of High-Temperature Pregrowth Treatment on the Surface Morphology of GaInP Epilayers on Ge Grown by Metal-Organic Vapor-Phase Epitaxy.JAPANESE JOURNAL OF APPLIED PHYSICS,51(1，Part 1),15501.
MLA	He, W,et al."Effect of High-Temperature Pregrowth Treatment on the Surface Morphology of GaInP Epilayers on Ge Grown by Metal-Organic Vapor-Phase Epitaxy".JAPANESE JOURNAL OF APPLIED PHYSICS 51.1，Part 1(2012):15501.

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