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Effect of High-Temperature Pregrowth Treatment on the Surface Morphology of GaInP Epilayers on Ge Grown by Metal-Organic Vapor-Phase Epitaxy
He, W; Lu, SL; Dong, JR; Zhao, YM; Yang, H
2012
Source PublicationJAPANESE JOURNAL OF APPLIED PHYSICS
Volume51Issue:1,Part 1Pages:15501
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2013-03-20
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23746
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
He, W,Lu, SL,Dong, JR,et al. Effect of High-Temperature Pregrowth Treatment on the Surface Morphology of GaInP Epilayers on Ge Grown by Metal-Organic Vapor-Phase Epitaxy[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2012,51(1,Part 1):15501.
APA He, W,Lu, SL,Dong, JR,Zhao, YM,&Yang, H.(2012).Effect of High-Temperature Pregrowth Treatment on the Surface Morphology of GaInP Epilayers on Ge Grown by Metal-Organic Vapor-Phase Epitaxy.JAPANESE JOURNAL OF APPLIED PHYSICS,51(1,Part 1),15501.
MLA He, W,et al."Effect of High-Temperature Pregrowth Treatment on the Surface Morphology of GaInP Epilayers on Ge Grown by Metal-Organic Vapor-Phase Epitaxy".JAPANESE JOURNAL OF APPLIED PHYSICS 51.1,Part 1(2012):15501.
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