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Polarization-induced remote interfacial charge scattering in Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors
Ji, D; Liu, B; Lu, YW; Liu, GP; Zhu, QS; Wang, ZG
2012
Source PublicationAPPLIED PHYSICS LETTERS
Volume100Issue:13Pages:132105
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2013-03-20
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23742
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Ji, D,Liu, B,Lu, YW,et al. Polarization-induced remote interfacial charge scattering in Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors[J]. APPLIED PHYSICS LETTERS,2012,100(13):132105.
APA Ji, D,Liu, B,Lu, YW,Liu, GP,Zhu, QS,&Wang, ZG.(2012).Polarization-induced remote interfacial charge scattering in Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors.APPLIED PHYSICS LETTERS,100(13),132105.
MLA Ji, D,et al."Polarization-induced remote interfacial charge scattering in Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors".APPLIED PHYSICS LETTERS 100.13(2012):132105.
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