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Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes
Le LC (Le, L. C.); Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Zhang SM (Zhang, S. M.); Yang H (Yang, H.); Li L (Li, L.); Wu LL (Wu, L. L.); Chen P (Chen, P.); Liu ZS (Liu, Z. S.); Li ZC (Li, Z. C.); Fan YM (Fan, Y. M.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.)
2012
Source PublicationAPPLIED PHYSICS LETTERS
Volume101Issue:25Pages:252110
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2013-03-20
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23736
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Le LC ,Zhao DG ,Jiang DS ,et al. Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes[J]. APPLIED PHYSICS LETTERS,2012,101(25):252110.
APA Le LC .,Zhao DG .,Jiang DS .,Zhang SM .,Yang H .,...&Wang H .(2012).Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes.APPLIED PHYSICS LETTERS,101(25),252110.
MLA Le LC ,et al."Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes".APPLIED PHYSICS LETTERS 101.25(2012):252110.
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