Knowledge Management System Of Institute of Semiconductors,CAS
A Low Power, Fully Integrated SiGe BiCMOS Baseband Circuitry for a Direct Conversion CMMB Tuner IC | |
Gong, Z; Chen, B; Hu, XQ; Shi, Y; Dai, FF | |
2012 | |
Source Publication | CHINESE JOURNAL OF ELECTRONICS
![]() |
Volume | 21Issue:2Pages:231-235 |
Subject Area | 半导体器件 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2013-03-19 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/23726 |
Collection | 高速电路与神经网络实验室 |
Recommended Citation GB/T 7714 | Gong, Z,Chen, B,Hu, XQ,et al. A Low Power, Fully Integrated SiGe BiCMOS Baseband Circuitry for a Direct Conversion CMMB Tuner IC[J]. CHINESE JOURNAL OF ELECTRONICS,2012,21(2):231-235. |
APA | Gong, Z,Chen, B,Hu, XQ,Shi, Y,&Dai, FF.(2012).A Low Power, Fully Integrated SiGe BiCMOS Baseband Circuitry for a Direct Conversion CMMB Tuner IC.CHINESE JOURNAL OF ELECTRONICS,21(2),231-235. |
MLA | Gong, Z,et al."A Low Power, Fully Integrated SiGe BiCMOS Baseband Circuitry for a Direct Conversion CMMB Tuner IC".CHINESE JOURNAL OF ELECTRONICS 21.2(2012):231-235. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
2012352.pdf(948KB) | 限制开放 | License | Application Full Text |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment