A Low Power, Fully Integrated SiGe BiCMOS Baseband Circuitry for a Direct Conversion CMMB Tuner IC

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	A Low Power, Fully Integrated SiGe BiCMOS Baseband Circuitry for a Direct Conversion CMMB Tuner IC
	Gong, Z; Chen, B; Hu, XQ; Shi, Y; Dai, FF
	2012
Source Publication	CHINESE JOURNAL OF ELECTRONICS
Volume	21 Issue:2 Pages:231-235
Subject Area	半导体器件
Indexed By	SCI
Language	英语
Date Available	2013-03-19
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/23726
Collection	高速电路与神经网络实验室
Recommended Citation GB/T 7714	Gong, Z,Chen, B,Hu, XQ,et al. A Low Power, Fully Integrated SiGe BiCMOS Baseband Circuitry for a Direct Conversion CMMB Tuner IC[J]. CHINESE JOURNAL OF ELECTRONICS,2012,21(2):231-235.
APA	Gong, Z,Chen, B,Hu, XQ,Shi, Y,&Dai, FF.(2012).A Low Power, Fully Integrated SiGe BiCMOS Baseband Circuitry for a Direct Conversion CMMB Tuner IC.CHINESE JOURNAL OF ELECTRONICS,21(2),231-235.
MLA	Gong, Z,et al."A Low Power, Fully Integrated SiGe BiCMOS Baseband Circuitry for a Direct Conversion CMMB Tuner IC".CHINESE JOURNAL OF ELECTRONICS 21.2(2012):231-235.

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