SEMI OpenIR  > 中科院半导体材料科学重点实验室
Low operating-voltage and high power-efficiency OLED employing MoO3-doped CuPc as hole injection layer
Li, LS; Guan, M; Cao, GH; Li, YY; Zeng, YP
2012
Source PublicationDISPLAYS
Volume33Issue:1Pages:17-20
Subject Area半导体材料
Indexed BySCI
Date Available2013-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23718
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Li, LS,Guan, M,Cao, GH,et al. Low operating-voltage and high power-efficiency OLED employing MoO3-doped CuPc as hole injection layer[J]. DISPLAYS,2012,33(1):17-20.
APA Li, LS,Guan, M,Cao, GH,Li, YY,&Zeng, YP.(2012).Low operating-voltage and high power-efficiency OLED employing MoO3-doped CuPc as hole injection layer.DISPLAYS,33(1),17-20.
MLA Li, LS,et al."Low operating-voltage and high power-efficiency OLED employing MoO3-doped CuPc as hole injection layer".DISPLAYS 33.1(2012):17-20.
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