SEMI OpenIR  > 中科院半导体材料科学重点实验室
Formation of AsxSb1-x mixing interfaces in InAs/GaSb superlattices grown by metalorganic chemical vapor deposition
Li, LG; Liu, SM; Luo, SA; Yang, T; Wang, LJ; Liu, FQ; Ye, XL; Xu, B; Wang, ZG
2012
Source PublicationEPL
Volume97Issue:3Pages:36001
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23715
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Li, LG,Liu, SM,Luo, SA,et al. Formation of AsxSb1-x mixing interfaces in InAs/GaSb superlattices grown by metalorganic chemical vapor deposition[J]. EPL,2012,97(3):36001.
APA Li, LG.,Liu, SM.,Luo, SA.,Yang, T.,Wang, LJ.,...&Wang, ZG.(2012).Formation of AsxSb1-x mixing interfaces in InAs/GaSb superlattices grown by metalorganic chemical vapor deposition.EPL,97(3),36001.
MLA Li, LG,et al."Formation of AsxSb1-x mixing interfaces in InAs/GaSb superlattices grown by metalorganic chemical vapor deposition".EPL 97.3(2012):36001.
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