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Ultrashort Pulse Generation at Quasi-40-GHz by Using a Two-Section Passively Mode-Locked InGaAsP-InP Tensile Strained Quantum-Well Laser
Kong, DH; Zhu, HL; Liang, S; Qiu, JF; Zhao, LJ
2012
Source PublicationCHINESE PHYSICS LETTERS
Volume29Issue:2Pages:24201
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23713
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Kong, DH,Zhu, HL,Liang, S,et al. Ultrashort Pulse Generation at Quasi-40-GHz by Using a Two-Section Passively Mode-Locked InGaAsP-InP Tensile Strained Quantum-Well Laser[J]. CHINESE PHYSICS LETTERS,2012,29(2):24201.
APA Kong, DH,Zhu, HL,Liang, S,Qiu, JF,&Zhao, LJ.(2012).Ultrashort Pulse Generation at Quasi-40-GHz by Using a Two-Section Passively Mode-Locked InGaAsP-InP Tensile Strained Quantum-Well Laser.CHINESE PHYSICS LETTERS,29(2),24201.
MLA Kong, DH,et al."Ultrashort Pulse Generation at Quasi-40-GHz by Using a Two-Section Passively Mode-Locked InGaAsP-InP Tensile Strained Quantum-Well Laser".CHINESE PHYSICS LETTERS 29.2(2012):24201.
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