| InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm | |
| Li, XK; Liang, DC; Jin, P; An, Q; Wei, H; Wu, J; Wang, ZG | |
| 2012 | |
| Source Publication | CHINESE PHYSICS B
 |
| Volume | 21Issue:2Pages:28102 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2013-03-17 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23712 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Li, XK,Liang, DC,Jin, P,et al. InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm[J]. CHINESE PHYSICS B,2012,21(2):28102. |
| APA | Li, XK.,Liang, DC.,Jin, P.,An, Q.,Wei, H.,...&Wang, ZG.(2012).InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm.CHINESE PHYSICS B,21(2),28102. |
| MLA | Li, XK,et al."InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm".CHINESE PHYSICS B 21.2(2012):28102. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012425.pdf（328KB） | 限制开放 | License | Application Full Text | |||
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