SEMI OpenIR  > 中科院半导体材料科学重点实验室
InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm
Li, XK; Liang, DC; Jin, P; An, Q; Wei, H; Wu, J; Wang, ZG
2012
Source PublicationCHINESE PHYSICS B
Volume21Issue:2Pages:28102
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23712
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Li, XK,Liang, DC,Jin, P,et al. InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm[J]. CHINESE PHYSICS B,2012,21(2):28102.
APA Li, XK.,Liang, DC.,Jin, P.,An, Q.,Wei, H.,...&Wang, ZG.(2012).InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm.CHINESE PHYSICS B,21(2),28102.
MLA Li, XK,et al."InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm".CHINESE PHYSICS B 21.2(2012):28102.
Files in This Item:
File Name/Size DocType Version Access License
2012425.pdf(328KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Li, XK]'s Articles
[Liang, DC]'s Articles
[Jin, P]'s Articles
Baidu academic
Similar articles in Baidu academic
[Li, XK]'s Articles
[Liang, DC]'s Articles
[Jin, P]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Li, XK]'s Articles
[Liang, DC]'s Articles
[Jin, P]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.