InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm | |
Li, XK; Liang, DC; Jin, P; An, Q; Wei, H; Wu, J; Wang, ZG | |
2012 | |
Source Publication | CHINESE PHYSICS B
![]() |
Volume | 21Issue:2Pages:28102 |
Subject Area | 半导体材料 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2013-03-17 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/23712 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Li, XK,Liang, DC,Jin, P,et al. InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm[J]. CHINESE PHYSICS B,2012,21(2):28102. |
APA | Li, XK.,Liang, DC.,Jin, P.,An, Q.,Wei, H.,...&Wang, ZG.(2012).InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm.CHINESE PHYSICS B,21(2),28102. |
MLA | Li, XK,et al."InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm".CHINESE PHYSICS B 21.2(2012):28102. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
2012425.pdf(328KB) | 限制开放 | License | Application Full Text |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment