Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable As (x) Sb1-x interfaces | |
Li, LG; Liu, SM; Luo, S; Yang, T; Wang, LJ; Liu, FQ; Ye, XL; Xu, B; Wang, ZG | |
2012 | |
Source Publication | NANOSCALE RESEARCH LETTERS
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Volume | 7Pages:160 |
Subject Area | 半导体材料 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2013-03-17 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/23707 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Li, LG,Liu, SM,Luo, S,et al. Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable As (x) Sb1-x interfaces[J]. NANOSCALE RESEARCH LETTERS,2012,7:160. |
APA | Li, LG.,Liu, SM.,Luo, S.,Yang, T.,Wang, LJ.,...&Wang, ZG.(2012).Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable As (x) Sb1-x interfaces.NANOSCALE RESEARCH LETTERS,7,160. |
MLA | Li, LG,et al."Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable As (x) Sb1-x interfaces".NANOSCALE RESEARCH LETTERS 7(2012):160. |
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