| Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable As (x) Sb1-x interfaces | |
| Li, LG; Liu, SM; Luo, S; Yang, T; Wang, LJ; Liu, FQ; Ye, XL; Xu, B; Wang, ZG | |
| 2012 | |
| Source Publication | NANOSCALE RESEARCH LETTERS
 |
| Volume | 7Pages:160 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2013-03-17 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23707 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Li, LG,Liu, SM,Luo, S,et al. Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable As (x) Sb1-x interfaces[J]. NANOSCALE RESEARCH LETTERS,2012,7:160. |
| APA | Li, LG.,Liu, SM.,Luo, S.,Yang, T.,Wang, LJ.,...&Wang, ZG.(2012).Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable As (x) Sb1-x interfaces.NANOSCALE RESEARCH LETTERS,7,160. |
| MLA | Li, LG,et al."Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable As (x) Sb1-x interfaces".NANOSCALE RESEARCH LETTERS 7(2012):160. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012409.pdf（481KB） | 限制开放 | License | Application Full Text | |||
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