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Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable As (x) Sb1-x interfaces
Li, LG; Liu, SM; Luo, S; Yang, T; Wang, LJ; Liu, FQ; Ye, XL; Xu, B; Wang, ZG
2012
Source PublicationNANOSCALE RESEARCH LETTERS
Volume7Pages:160
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23707
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Li, LG,Liu, SM,Luo, S,et al. Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable As (x) Sb1-x interfaces[J]. NANOSCALE RESEARCH LETTERS,2012,7:160.
APA Li, LG.,Liu, SM.,Luo, S.,Yang, T.,Wang, LJ.,...&Wang, ZG.(2012).Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable As (x) Sb1-x interfaces.NANOSCALE RESEARCH LETTERS,7,160.
MLA Li, LG,et al."Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable As (x) Sb1-x interfaces".NANOSCALE RESEARCH LETTERS 7(2012):160.
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