Residual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes | |
Zheng, CC; Xu, SJ; Ning, JQ; Bao, W; Wang, JF; Gao, J; Liu, JM; Zhu, JH; Liu, XL | |
2012 | |
Source Publication | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
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Volume | 27Issue:3Pages:35008 |
Subject Area | 半导体材料 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2013-03-17 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/23703 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Zheng, CC,Xu, SJ,Ning, JQ,et al. Residual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2012,27(3):35008. |
APA | Zheng, CC.,Xu, SJ.,Ning, JQ.,Bao, W.,Wang, JF.,...&Liu, XL.(2012).Residual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,27(3),35008. |
MLA | Zheng, CC,et al."Residual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 27.3(2012):35008. |
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