SEMI OpenIR  > 中科院半导体材料科学重点实验室
Residual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes
Zheng, CC; Xu, SJ; Ning, JQ; Bao, W; Wang, JF; Gao, J; Liu, JM; Zhu, JH; Liu, XL
2012
Source PublicationSEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume27Issue:3Pages:35008
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23703
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Zheng, CC,Xu, SJ,Ning, JQ,et al. Residual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2012,27(3):35008.
APA Zheng, CC.,Xu, SJ.,Ning, JQ.,Bao, W.,Wang, JF.,...&Liu, XL.(2012).Residual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,27(3),35008.
MLA Zheng, CC,et al."Residual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 27.3(2012):35008.
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