SEMI OpenIR  > 集成光电子学国家重点实验室
Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN
Zeng, C; Zhang, SM; Wang, H; Liu, JP; Wang, HB; Li, ZC; Feng, MX; Zhao, DG; Liu, ZS; Jiang, DS; Yang, H
2012
Source PublicationCHINESE PHYSICS LETTERS
Volume29Issue:1Pages:17301
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2013-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23689
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Zeng, C,Zhang, SM,Wang, H,et al. Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN[J]. CHINESE PHYSICS LETTERS,2012,29(1):17301.
APA Zeng, C.,Zhang, SM.,Wang, H.,Liu, JP.,Wang, HB.,...&Yang, H.(2012).Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN.CHINESE PHYSICS LETTERS,29(1),17301.
MLA Zeng, C,et al."Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN".CHINESE PHYSICS LETTERS 29.1(2012):17301.
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