| Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN | |
| Zeng, C; Zhang, SM; Wang, H; Liu, JP; Wang, HB; Li, ZC; Feng, MX; Zhao, DG; Liu, ZS; Jiang, DS; Yang, H | |
| 2012 | |
| Source Publication | CHINESE PHYSICS LETTERS
 |
| Volume | 29Issue:1Pages:17301 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2013-03-17 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23689 |
| Collection | 集成光电子学国家重点实验室 |
| Recommended Citation GB/T 7714 | Zeng, C,Zhang, SM,Wang, H,et al. Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN[J]. CHINESE PHYSICS LETTERS,2012,29(1):17301. |
| APA | Zeng, C.,Zhang, SM.,Wang, H.,Liu, JP.,Wang, HB.,...&Yang, H.(2012).Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN.CHINESE PHYSICS LETTERS,29(1),17301. |
| MLA | Zeng, C,et al."Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN".CHINESE PHYSICS LETTERS 29.1(2012):17301. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012461.pdf（619KB） | 限制开放 | License | Application Full Text | |||
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