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Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1-xN/GaN multi-quantum wells
Liu, GP; Wu, J; Lu, YW; Zhao, GJ; Gu, CY; Liu, CB; Sang, L; Yang, SY; Liu, XL; Zhu, QS; Wang, ZG
2012
Source PublicationAPPLIED PHYSICS LETTERS
Volume100Issue:16Pages:162102
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23687
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Liu, GP,Wu, J,Lu, YW,et al. Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1-xN/GaN multi-quantum wells[J]. APPLIED PHYSICS LETTERS,2012,100(16):162102.
APA Liu, GP.,Wu, J.,Lu, YW.,Zhao, GJ.,Gu, CY.,...&Wang, ZG.(2012).Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1-xN/GaN multi-quantum wells.APPLIED PHYSICS LETTERS,100(16),162102.
MLA Liu, GP,et al."Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1-xN/GaN multi-quantum wells".APPLIED PHYSICS LETTERS 100.16(2012):162102.
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