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Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon
Hu, WX; Cheng, BW; Xue, CL; Zhang, GZ; Su, SJ; Zuo, YH; Wang, QM
2012
Source PublicationCHINESE PHYSICS B
Volume21Issue:1Pages:17805
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2013-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23686
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Hu, WX,Cheng, BW,Xue, CL,et al. Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon[J]. CHINESE PHYSICS B,2012,21(1):17805.
APA Hu, WX.,Cheng, BW.,Xue, CL.,Zhang, GZ.,Su, SJ.,...&Wang, QM.(2012).Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon.CHINESE PHYSICS B,21(1),17805.
MLA Hu, WX,et al."Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon".CHINESE PHYSICS B 21.1(2012):17805.
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