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Remarkable Franz-Keldysh Effect in Ge-on-Si p-i-n Diodes
Li, YM; Hu, WX; Cheng, BW; Liu, Z; Wang, QM
2012
Source PublicationCHINESE PHYSICS LETTERS
Volume29Issue:3Pages:34205
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2013-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23678
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Li, YM,Hu, WX,Cheng, BW,et al. Remarkable Franz-Keldysh Effect in Ge-on-Si p-i-n Diodes[J]. CHINESE PHYSICS LETTERS,2012,29(3):34205.
APA Li, YM,Hu, WX,Cheng, BW,Liu, Z,&Wang, QM.(2012).Remarkable Franz-Keldysh Effect in Ge-on-Si p-i-n Diodes.CHINESE PHYSICS LETTERS,29(3),34205.
MLA Li, YM,et al."Remarkable Franz-Keldysh Effect in Ge-on-Si p-i-n Diodes".CHINESE PHYSICS LETTERS 29.3(2012):34205.
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