Remarkable Franz-Keldysh Effect in Ge-on-Si p-i-n Diodes | |
Li, YM; Hu, WX; Cheng, BW; Liu, Z; Wang, QM | |
2012 | |
Source Publication | CHINESE PHYSICS LETTERS
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Volume | 29Issue:3Pages:34205 |
Subject Area | 光电子学 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2013-03-17 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/23678 |
Collection | 集成光电子学国家重点实验室 |
Recommended Citation GB/T 7714 | Li, YM,Hu, WX,Cheng, BW,et al. Remarkable Franz-Keldysh Effect in Ge-on-Si p-i-n Diodes[J]. CHINESE PHYSICS LETTERS,2012,29(3):34205. |
APA | Li, YM,Hu, WX,Cheng, BW,Liu, Z,&Wang, QM.(2012).Remarkable Franz-Keldysh Effect in Ge-on-Si p-i-n Diodes.CHINESE PHYSICS LETTERS,29(3),34205. |
MLA | Li, YM,et al."Remarkable Franz-Keldysh Effect in Ge-on-Si p-i-n Diodes".CHINESE PHYSICS LETTERS 29.3(2012):34205. |
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