| Remarkable Franz-Keldysh Effect in Ge-on-Si p-i-n Diodes | |
| Li, YM; Hu, WX; Cheng, BW; Liu, Z; Wang, QM | |
| 2012 | |
| Source Publication | CHINESE PHYSICS LETTERS
 |
| Volume | 29Issue:3Pages:34205 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2013-03-17 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23678 |
| Collection | 集成光电子学国家重点实验室 |
| Recommended Citation GB/T 7714 | Li, YM,Hu, WX,Cheng, BW,et al. Remarkable Franz-Keldysh Effect in Ge-on-Si p-i-n Diodes[J]. CHINESE PHYSICS LETTERS,2012,29(3):34205. |
| APA | Li, YM,Hu, WX,Cheng, BW,Liu, Z,&Wang, QM.(2012).Remarkable Franz-Keldysh Effect in Ge-on-Si p-i-n Diodes.CHINESE PHYSICS LETTERS,29(3),34205. |
| MLA | Li, YM,et al."Remarkable Franz-Keldysh Effect in Ge-on-Si p-i-n Diodes".CHINESE PHYSICS LETTERS 29.3(2012):34205. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012389.pdf（509KB） | 限制开放 | License | Application Full Text | |||
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