SEMI OpenIR  > 集成光电子学国家重点实验室
Distribution of electric field and design of devices in GaN avalanche photodiodes
Wu, LL; Zhao, DG; Deng, Y; Jiang, DS; Zhu, JJ; Wang, H; Liu, ZS; Zhang, SM; Zhang, BS; Yang, H
2012
Source PublicationSCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY
Volume55Issue:4Pages:619-624
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2013-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23667
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Wu, LL,Zhao, DG,Deng, Y,et al. Distribution of electric field and design of devices in GaN avalanche photodiodes[J]. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,2012,55(4):619-624.
APA Wu, LL.,Zhao, DG.,Deng, Y.,Jiang, DS.,Zhu, JJ.,...&Yang, H.(2012).Distribution of electric field and design of devices in GaN avalanche photodiodes.SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,55(4),619-624.
MLA Wu, LL,et al."Distribution of electric field and design of devices in GaN avalanche photodiodes".SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY 55.4(2012):619-624.
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