Distribution of electric field and design of devices in GaN avalanche photodiodes | |
Wu, LL; Zhao, DG; Deng, Y; Jiang, DS; Zhu, JJ; Wang, H; Liu, ZS; Zhang, SM; Zhang, BS; Yang, H | |
2012 | |
Source Publication | SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY
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Volume | 55Issue:4Pages:619-624 |
Subject Area | 光电子学 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2013-03-17 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/23667 |
Collection | 集成光电子学国家重点实验室 |
Recommended Citation GB/T 7714 | Wu, LL,Zhao, DG,Deng, Y,et al. Distribution of electric field and design of devices in GaN avalanche photodiodes[J]. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,2012,55(4):619-624. |
APA | Wu, LL.,Zhao, DG.,Deng, Y.,Jiang, DS.,Zhu, JJ.,...&Yang, H.(2012).Distribution of electric field and design of devices in GaN avalanche photodiodes.SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,55(4),619-624. |
MLA | Wu, LL,et al."Distribution of electric field and design of devices in GaN avalanche photodiodes".SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY 55.4(2012):619-624. |
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