Formation Mechanism and Characterization of Black Silicon Surface by a Single-Step Wet-Chemical Process | |
Li, LG; Liu, SM; Yo, XL; Hossu, M; Jiang, K; Chen, W; Wang, ZG | |
2012 | |
Source Publication | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
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Volume | 12Issue:5Pages:3954-3958 |
Subject Area | 半导体材料 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2013-03-17 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/23660 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Li, LG,Liu, SM,Yo, XL,et al. Formation Mechanism and Characterization of Black Silicon Surface by a Single-Step Wet-Chemical Process[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2012,12(5):3954-3958. |
APA | Li, LG.,Liu, SM.,Yo, XL.,Hossu, M.,Jiang, K.,...&Wang, ZG.(2012).Formation Mechanism and Characterization of Black Silicon Surface by a Single-Step Wet-Chemical Process.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,12(5),3954-3958. |
MLA | Li, LG,et al."Formation Mechanism and Characterization of Black Silicon Surface by a Single-Step Wet-Chemical Process".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 12.5(2012):3954-3958. |
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