Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth | |
Li, ZW; Wei, HY; Xu, XQ; Zhao, GJ; Liu, XL; Yang, SY; Zhu, QS; Wang, ZG | |
2012 | |
Source Publication | JOURNAL OF CRYSTAL GROWTH
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Volume | 348Issue:1Pages:10-14 |
Subject Area | 半导体材料 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2013-03-17 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/23653 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Li, ZW,Wei, HY,Xu, XQ,et al. Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth[J]. JOURNAL OF CRYSTAL GROWTH,2012,348(1):10-14. |
APA | Li, ZW.,Wei, HY.,Xu, XQ.,Zhao, GJ.,Liu, XL.,...&Wang, ZG.(2012).Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth.JOURNAL OF CRYSTAL GROWTH,348(1),10-14. |
MLA | Li, ZW,et al."Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth".JOURNAL OF CRYSTAL GROWTH 348.1(2012):10-14. |
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