SEMI OpenIR  > 中科院半导体材料科学重点实验室
Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth
Li, ZW; Wei, HY; Xu, XQ; Zhao, GJ; Liu, XL; Yang, SY; Zhu, QS; Wang, ZG
2012
Source PublicationJOURNAL OF CRYSTAL GROWTH
Volume348Issue:1Pages:10-14
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23653
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Li, ZW,Wei, HY,Xu, XQ,et al. Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth[J]. JOURNAL OF CRYSTAL GROWTH,2012,348(1):10-14.
APA Li, ZW.,Wei, HY.,Xu, XQ.,Zhao, GJ.,Liu, XL.,...&Wang, ZG.(2012).Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth.JOURNAL OF CRYSTAL GROWTH,348(1),10-14.
MLA Li, ZW,et al."Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth".JOURNAL OF CRYSTAL GROWTH 348.1(2012):10-14.
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