| Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth | |
| Li, ZW; Wei, HY; Xu, XQ; Zhao, GJ; Liu, XL; Yang, SY; Zhu, QS; Wang, ZG | |
| 2012 | |
| Source Publication | JOURNAL OF CRYSTAL GROWTH
 |
| Volume | 348Issue:1Pages:10-14 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2013-03-17 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23653 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Li, ZW,Wei, HY,Xu, XQ,et al. Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth[J]. JOURNAL OF CRYSTAL GROWTH,2012,348(1):10-14. |
| APA | Li, ZW.,Wei, HY.,Xu, XQ.,Zhao, GJ.,Liu, XL.,...&Wang, ZG.(2012).Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth.JOURNAL OF CRYSTAL GROWTH,348(1),10-14. |
| MLA | Li, ZW,et al."Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth".JOURNAL OF CRYSTAL GROWTH 348.1(2012):10-14. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012295.pdf（863KB） | 限制开放 | License | Application Full Text | |||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment