SEMI OpenIR  > 中科院半导体照明研发中心
Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres
Wei, TB; Chen, Y; Hu, Q; Yang, JK; Huo, ZQ; Duan, RF; Wang, JX; Zeng, YP; Li, JM; Liao, YX; Yin, FT
2012
Source PublicationMATERIALS LETTERS
Volume68Pages:327-330
Subject Area半导体材料
Indexed BySCI
Date Available2013-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23651
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Wei, TB,Chen, Y,Hu, Q,et al. Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres[J]. MATERIALS LETTERS,2012,68:327-330.
APA Wei, TB.,Chen, Y.,Hu, Q.,Yang, JK.,Huo, ZQ.,...&Yin, FT.(2012).Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres.MATERIALS LETTERS,68,327-330.
MLA Wei, TB,et al."Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres".MATERIALS LETTERS 68(2012):327-330.
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