SEMI OpenIR  > 中科院半导体材料科学重点实验室
Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates
Dong, L; Sun, GS; Zheng, L; Liu, XF; Zhang, F; Yan, GG; Zhao, WS; Wang, L; Li, XG; Wang, ZG
2012
Source PublicationJOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume45Issue:24Pages:245102
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23649
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Dong, L,Sun, GS,Zheng, L,et al. Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2012,45(24):245102.
APA Dong, L.,Sun, GS.,Zheng, L.,Liu, XF.,Zhang, F.,...&Wang, ZG.(2012).Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates.JOURNAL OF PHYSICS D-APPLIED PHYSICS,45(24),245102.
MLA Dong, L,et al."Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates".JOURNAL OF PHYSICS D-APPLIED PHYSICS 45.24(2012):245102.
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