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Enhancement in the Light Output Power of GaN-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres
Zhang, YY; Li, J; Wei, TB; Liu, J; Yi, XY; Wang, GH; Yi, FT
2012
Source PublicationJAPANESE JOURNAL OF APPLIED PHYSICS
Volume51Issue:2,Part 1Pages:20204
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2013-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23647
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Zhang, YY,Li, J,Wei, TB,et al. Enhancement in the Light Output Power of GaN-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2012,51(2,Part 1):20204.
APA Zhang, YY.,Li, J.,Wei, TB.,Liu, J.,Yi, XY.,...&Yi, FT.(2012).Enhancement in the Light Output Power of GaN-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres.JAPANESE JOURNAL OF APPLIED PHYSICS,51(2,Part 1),20204.
MLA Zhang, YY,et al."Enhancement in the Light Output Power of GaN-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres".JAPANESE JOURNAL OF APPLIED PHYSICS 51.2,Part 1(2012):20204.
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