| Enhancement in the Light Output Power of GaN-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres | |
| Zhang, YY; Li, J; Wei, TB; Liu, J; Yi, XY; Wang, GH; Yi, FT | |
| 2012 | |
| Source Publication | JAPANESE JOURNAL OF APPLIED PHYSICS
 |
| Volume | 51Issue:2，Part 1Pages:20204 |
| Subject Area | 半导体物理 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2013-03-17 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23647 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | Zhang, YY,Li, J,Wei, TB,et al. Enhancement in the Light Output Power of GaN-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2012,51(2，Part 1):20204. |
| APA | Zhang, YY.,Li, J.,Wei, TB.,Liu, J.,Yi, XY.,...&Yi, FT.(2012).Enhancement in the Light Output Power of GaN-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres.JAPANESE JOURNAL OF APPLIED PHYSICS,51(2，Part 1),20204. |
| MLA | Zhang, YY,et al."Enhancement in the Light Output Power of GaN-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres".JAPANESE JOURNAL OF APPLIED PHYSICS 51.2，Part 1(2012):20204. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012428.pdf（721KB） | 限制开放 | License | Application Full Text | |||
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