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The Effects of Femtosecond Laser Irradiation and Thermal Annealing on the Optoelectronic Properties of Silicon Supersaturated with Sulfur
Hu, SX; Han, PD; Gao, LP; Mao, X; Li, XY; Fan, YJ
2012
Source PublicationCHINESE PHYSICS LETTERS
Volume29Issue:4Pages:46101
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2013-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23643
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Hu, SX,Han, PD,Gao, LP,et al. The Effects of Femtosecond Laser Irradiation and Thermal Annealing on the Optoelectronic Properties of Silicon Supersaturated with Sulfur[J]. CHINESE PHYSICS LETTERS,2012,29(4):46101.
APA Hu, SX,Han, PD,Gao, LP,Mao, X,Li, XY,&Fan, YJ.(2012).The Effects of Femtosecond Laser Irradiation and Thermal Annealing on the Optoelectronic Properties of Silicon Supersaturated with Sulfur.CHINESE PHYSICS LETTERS,29(4),46101.
MLA Hu, SX,et al."The Effects of Femtosecond Laser Irradiation and Thermal Annealing on the Optoelectronic Properties of Silicon Supersaturated with Sulfur".CHINESE PHYSICS LETTERS 29.4(2012):46101.
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