| Quantitative strain analysis of misfit dislocations in a Ge/Si heterostructure interface by geometric phase analysis | |
| Liu, QL; Zhao, CW; Xing, YM; Su, SJ; Cheng, BW | |
| 2012 | |
| Source Publication | OPTICS AND LASERS IN ENGINEERING
 |
| Volume | 50Issue:5Pages:796-799 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2013-03-17 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23638 |
| Collection | 集成光电子学国家重点实验室 |
| Recommended Citation GB/T 7714 | Liu, QL,Zhao, CW,Xing, YM,et al. Quantitative strain analysis of misfit dislocations in a Ge/Si heterostructure interface by geometric phase analysis[J]. OPTICS AND LASERS IN ENGINEERING,2012,50(5):796-799. |
| APA | Liu, QL,Zhao, CW,Xing, YM,Su, SJ,&Cheng, BW.(2012).Quantitative strain analysis of misfit dislocations in a Ge/Si heterostructure interface by geometric phase analysis.OPTICS AND LASERS IN ENGINEERING,50(5),796-799. |
| MLA | Liu, QL,et al."Quantitative strain analysis of misfit dislocations in a Ge/Si heterostructure interface by geometric phase analysis".OPTICS AND LASERS IN ENGINEERING 50.5(2012):796-799. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012328.pdf（788KB） | 限制开放 | License | Application Full Text | |||
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