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Quantitative strain analysis of misfit dislocations in a Ge/Si heterostructure interface by geometric phase analysis
Liu, QL; Zhao, CW; Xing, YM; Su, SJ; Cheng, BW
2012
Source PublicationOPTICS AND LASERS IN ENGINEERING
Volume50Issue:5Pages:796-799
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2013-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23638
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Liu, QL,Zhao, CW,Xing, YM,et al. Quantitative strain analysis of misfit dislocations in a Ge/Si heterostructure interface by geometric phase analysis[J]. OPTICS AND LASERS IN ENGINEERING,2012,50(5):796-799.
APA Liu, QL,Zhao, CW,Xing, YM,Su, SJ,&Cheng, BW.(2012).Quantitative strain analysis of misfit dislocations in a Ge/Si heterostructure interface by geometric phase analysis.OPTICS AND LASERS IN ENGINEERING,50(5),796-799.
MLA Liu, QL,et al."Quantitative strain analysis of misfit dislocations in a Ge/Si heterostructure interface by geometric phase analysis".OPTICS AND LASERS IN ENGINEERING 50.5(2012):796-799.
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