SEMI OpenIR  > 集成光电子学国家重点实验室
Dopant Segregation and Nickel Stanogermanide Contact Formation on p(+) Ge0.947Sn0.053 Source/Drain
Han, GQ; Su, SJ; Zhou, Q; Guo, PF; Yang, Y; Zhan, CL; Wang, LX; Wang, W; Wang, QM; Xue, CL; Cheng, BW; Yeo, YC
2012
Source PublicationIEEE ELECTRON DEVICE LETTERS
Volume33Issue:5Pages:634-636
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2013-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23636
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Han, GQ,Su, SJ,Zhou, Q,et al. Dopant Segregation and Nickel Stanogermanide Contact Formation on p(+) Ge0.947Sn0.053 Source/Drain[J]. IEEE ELECTRON DEVICE LETTERS,2012,33(5):634-636.
APA Han, GQ.,Su, SJ.,Zhou, Q.,Guo, PF.,Yang, Y.,...&Yeo, YC.(2012).Dopant Segregation and Nickel Stanogermanide Contact Formation on p(+) Ge0.947Sn0.053 Source/Drain.IEEE ELECTRON DEVICE LETTERS,33(5),634-636.
MLA Han, GQ,et al."Dopant Segregation and Nickel Stanogermanide Contact Formation on p(+) Ge0.947Sn0.053 Source/Drain".IEEE ELECTRON DEVICE LETTERS 33.5(2012):634-636.
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