Thermal characterization of GaN-based laser diodes by forward-voltage method | |
Feng, MX; Zhang, SM; Jiang, DS; Liu, JP; Wang, H; Zeng, C; Li, ZC; Wang, HB; Wang, F; Yang, H | |
2012 | |
Source Publication | JOURNAL OF APPLIED PHYSICS
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Volume | 111Issue:9Pages:94513 |
Subject Area | 光电子学 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2013-03-17 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/23633 |
Collection | 集成光电子学国家重点实验室 |
Recommended Citation GB/T 7714 | Feng, MX,Zhang, SM,Jiang, DS,et al. Thermal characterization of GaN-based laser diodes by forward-voltage method[J]. JOURNAL OF APPLIED PHYSICS,2012,111(9):94513. |
APA | Feng, MX.,Zhang, SM.,Jiang, DS.,Liu, JP.,Wang, H.,...&Yang, H.(2012).Thermal characterization of GaN-based laser diodes by forward-voltage method.JOURNAL OF APPLIED PHYSICS,111(9),94513. |
MLA | Feng, MX,et al."Thermal characterization of GaN-based laser diodes by forward-voltage method".JOURNAL OF APPLIED PHYSICS 111.9(2012):94513. |
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