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Thermal characterization of GaN-based laser diodes by forward-voltage method
Feng, MX; Zhang, SM; Jiang, DS; Liu, JP; Wang, H; Zeng, C; Li, ZC; Wang, HB; Wang, F; Yang, H
2012
Source PublicationJOURNAL OF APPLIED PHYSICS
Volume111Issue:9Pages:94513
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2013-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23633
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Feng, MX,Zhang, SM,Jiang, DS,et al. Thermal characterization of GaN-based laser diodes by forward-voltage method[J]. JOURNAL OF APPLIED PHYSICS,2012,111(9):94513.
APA Feng, MX.,Zhang, SM.,Jiang, DS.,Liu, JP.,Wang, H.,...&Yang, H.(2012).Thermal characterization of GaN-based laser diodes by forward-voltage method.JOURNAL OF APPLIED PHYSICS,111(9),94513.
MLA Feng, MX,et al."Thermal characterization of GaN-based laser diodes by forward-voltage method".JOURNAL OF APPLIED PHYSICS 111.9(2012):94513.
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