| Thermal characterization of GaN-based laser diodes by forward-voltage method | |
| Feng, MX; Zhang, SM; Jiang, DS; Liu, JP; Wang, H; Zeng, C; Li, ZC; Wang, HB; Wang, F; Yang, H | |
| 2012 | |
| Source Publication | JOURNAL OF APPLIED PHYSICS
 |
| Volume | 111Issue:9Pages:94513 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2013-03-17 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23633 |
| Collection | 集成光电子学国家重点实验室 |
| Recommended Citation GB/T 7714 | Feng, MX,Zhang, SM,Jiang, DS,et al. Thermal characterization of GaN-based laser diodes by forward-voltage method[J]. JOURNAL OF APPLIED PHYSICS,2012,111(9):94513. |
| APA | Feng, MX.,Zhang, SM.,Jiang, DS.,Liu, JP.,Wang, H.,...&Yang, H.(2012).Thermal characterization of GaN-based laser diodes by forward-voltage method.JOURNAL OF APPLIED PHYSICS,111(9),94513. |
| MLA | Feng, MX,et al."Thermal characterization of GaN-based laser diodes by forward-voltage method".JOURNAL OF APPLIED PHYSICS 111.9(2012):94513. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012318.pdf（635KB） | 限制开放 | License | Application Full Text | |||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment