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Understanding of Thermal Engineering for Vertical Nanowire Phase-Change Random Access Memory Partially Wrapped by Low-Conductivity Layer
Zhang, JY; Wang, XF; Wang, XD; Ma, HL; Fu, YC; Ji, A; Song, ZT; Feng, SL; Yang, FH
2012
Source PublicationJAPANESE JOURNAL OF APPLIED PHYSICS
Volume51Issue:2,Part 1Pages:24302
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2013-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23609
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
Zhang, JY,Wang, XF,Wang, XD,et al. Understanding of Thermal Engineering for Vertical Nanowire Phase-Change Random Access Memory Partially Wrapped by Low-Conductivity Layer[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2012,51(2,Part 1):24302.
APA Zhang, JY.,Wang, XF.,Wang, XD.,Ma, HL.,Fu, YC.,...&Yang, FH.(2012).Understanding of Thermal Engineering for Vertical Nanowire Phase-Change Random Access Memory Partially Wrapped by Low-Conductivity Layer.JAPANESE JOURNAL OF APPLIED PHYSICS,51(2,Part 1),24302.
MLA Zhang, JY,et al."Understanding of Thermal Engineering for Vertical Nanowire Phase-Change Random Access Memory Partially Wrapped by Low-Conductivity Layer".JAPANESE JOURNAL OF APPLIED PHYSICS 51.2,Part 1(2012):24302.
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