| Interfacial misfit dislocation scattering effect in two-dimensional electron gas channel of GaN heterojunction | |
| Liu, B; Lu, YW; Huang, Y; Liu, GP; Zhu, QS; Wang, ZG | |
| 2012 | |
| Source Publication | PHYSICS LETTERS A
 |
| Volume | 376Issue:2012-10-11Pages:1067-1071 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2013-03-17 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23607 |
| Collection | 半导体集成技术工程研究中心 |
| Recommended Citation GB/T 7714 | Liu, B,Lu, YW,Huang, Y,et al. Interfacial misfit dislocation scattering effect in two-dimensional electron gas channel of GaN heterojunction[J]. PHYSICS LETTERS A,2012,376(2012-10-11):1067-1071. |
| APA | Liu, B,Lu, YW,Huang, Y,Liu, GP,Zhu, QS,&Wang, ZG.(2012).Interfacial misfit dislocation scattering effect in two-dimensional electron gas channel of GaN heterojunction.PHYSICS LETTERS A,376(2012-10-11),1067-1071. |
| MLA | Liu, B,et al."Interfacial misfit dislocation scattering effect in two-dimensional electron gas channel of GaN heterojunction".PHYSICS LETTERS A 376.2012-10-11(2012):1067-1071. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012413.pdf（825KB） | 限制开放 | License | Application Full Text | |||
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