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Interfacial misfit dislocation scattering effect in two-dimensional electron gas channel of GaN heterojunction
Liu, B; Lu, YW; Huang, Y; Liu, GP; Zhu, QS; Wang, ZG
2012
Source PublicationPHYSICS LETTERS A
Volume376Issue:2012-10-11Pages:1067-1071
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2013-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23607
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
Liu, B,Lu, YW,Huang, Y,et al. Interfacial misfit dislocation scattering effect in two-dimensional electron gas channel of GaN heterojunction[J]. PHYSICS LETTERS A,2012,376(2012-10-11):1067-1071.
APA Liu, B,Lu, YW,Huang, Y,Liu, GP,Zhu, QS,&Wang, ZG.(2012).Interfacial misfit dislocation scattering effect in two-dimensional electron gas channel of GaN heterojunction.PHYSICS LETTERS A,376(2012-10-11),1067-1071.
MLA Liu, B,et al."Interfacial misfit dislocation scattering effect in two-dimensional electron gas channel of GaN heterojunction".PHYSICS LETTERS A 376.2012-10-11(2012):1067-1071.
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