SEMI OpenIR  > 半导体超晶格国家重点实验室
A comparative study for quantum transport calculations of nanosized field-effect transistors
Jiang, XW; Li, SS; Wang, LW
2012
Source PublicationSOLID-STATE ELECTRONICS
Volume68Pages:56-62
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2013-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23595
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Jiang, XW,Li, SS,Wang, LW. A comparative study for quantum transport calculations of nanosized field-effect transistors[J]. SOLID-STATE ELECTRONICS,2012,68:56-62.
APA Jiang, XW,Li, SS,&Wang, LW.(2012).A comparative study for quantum transport calculations of nanosized field-effect transistors.SOLID-STATE ELECTRONICS,68,56-62.
MLA Jiang, XW,et al."A comparative study for quantum transport calculations of nanosized field-effect transistors".SOLID-STATE ELECTRONICS 68(2012):56-62.
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