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Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs | |
Jiang, XW; Li, SS | |
2012 | |
Source Publication | CHINESE PHYSICS B
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Volume | 21Issue:2Pages:27304 |
Subject Area | 半导体物理 |
Date Available | 2013-03-17 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/23593 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Jiang, XW,Li, SS. Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs[J]. CHINESE PHYSICS B,2012,21(2):27304. |
APA | Jiang, XW,&Li, SS.(2012).Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs.CHINESE PHYSICS B,21(2),27304. |
MLA | Jiang, XW,et al."Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs".CHINESE PHYSICS B 21.2(2012):27304. |
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2012424.pdf(747KB) | 限制开放 | License | Application Full Text |
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