SEMI OpenIR  > 半导体超晶格国家重点实验室
Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs
Jiang, XW; Li, SS
2012
Source PublicationCHINESE PHYSICS B
Volume21Issue:2Pages:27304
Subject Area半导体物理
Date Available2013-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23593
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Jiang, XW,Li, SS. Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs[J]. CHINESE PHYSICS B,2012,21(2):27304.
APA Jiang, XW,&Li, SS.(2012).Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs.CHINESE PHYSICS B,21(2),27304.
MLA Jiang, XW,et al."Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs".CHINESE PHYSICS B 21.2(2012):27304.
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