Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs

	Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs
	Jiang, XW; Li, SS
	2012
Source Publication	CHINESE PHYSICS B
Volume	21 Issue:2 Pages:27304
Subject Area	半导体物理
Date Available	2013-03-17
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/23593
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	Jiang, XW,Li, SS. Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs[J]. CHINESE PHYSICS B,2012,21(2):27304.
APA	Jiang, XW,&Li, SS.(2012).Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs.CHINESE PHYSICS B,21(2),27304.
MLA	Jiang, XW,et al."Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs".CHINESE PHYSICS B 21.2(2012):27304.

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