SEMI OpenIR  > 半导体超晶格国家重点实验室
Quantum Efficiency of Charge Qubit Measurements Using a Single Electron Transistor
Ye, Y; Ping, J; Jiao, HJ; Li, SS; Li, XQ
2012
Source PublicationINTERNATIONAL JOURNAL OF THEORETICAL PHYSICS
Volume51Issue:2Pages:629-638
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2013-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23591
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Ye, Y,Ping, J,Jiao, HJ,et al. Quantum Efficiency of Charge Qubit Measurements Using a Single Electron Transistor[J]. INTERNATIONAL JOURNAL OF THEORETICAL PHYSICS,2012,51(2):629-638.
APA Ye, Y,Ping, J,Jiao, HJ,Li, SS,&Li, XQ.(2012).Quantum Efficiency of Charge Qubit Measurements Using a Single Electron Transistor.INTERNATIONAL JOURNAL OF THEORETICAL PHYSICS,51(2),629-638.
MLA Ye, Y,et al."Quantum Efficiency of Charge Qubit Measurements Using a Single Electron Transistor".INTERNATIONAL JOURNAL OF THEORETICAL PHYSICS 51.2(2012):629-638.
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