SEMI OpenIR  > 半导体超晶格国家重点实验室
Photoluminescence study of low density InAs quantum clusters grown by molecular beam epitaxy
Yu, Y; Li, MF; He, JF; Zhu, Y; Wang, LJ; Ni, HQ; He, ZH; Niu, ZC
2012
Source PublicationNANOTECHNOLOGY
Volume23Issue:6Pages:65706
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2013-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23590
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Yu, Y,Li, MF,He, JF,et al. Photoluminescence study of low density InAs quantum clusters grown by molecular beam epitaxy[J]. NANOTECHNOLOGY,2012,23(6):65706.
APA Yu, Y.,Li, MF.,He, JF.,Zhu, Y.,Wang, LJ.,...&Niu, ZC.(2012).Photoluminescence study of low density InAs quantum clusters grown by molecular beam epitaxy.NANOTECHNOLOGY,23(6),65706.
MLA Yu, Y,et al."Photoluminescence study of low density InAs quantum clusters grown by molecular beam epitaxy".NANOTECHNOLOGY 23.6(2012):65706.
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