Temperature dependence of electron-spin relaxation in a single InAs quantum dot at zero applied magnetic field

	Temperature dependence of electron-spin relaxation in a single InAs quantum dot at zero applied magnetic field
	Dou, XM; Sun, BQ; Jiang, DS; Ni, HQ; Niu, ZC
	2012
Source Publication	JOURNAL OF APPLIED PHYSICS
Volume	111 Issue:5 Pages:53524
Subject Area	半导体物理
Indexed By	SCI
Language	英语
Date Available	2013-03-17
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/23585
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	Dou, XM,Sun, BQ,Jiang, DS,et al. Temperature dependence of electron-spin relaxation in a single InAs quantum dot at zero applied magnetic field[J]. JOURNAL OF APPLIED PHYSICS,2012,111(5):53524.
APA	Dou, XM,Sun, BQ,Jiang, DS,Ni, HQ,&Niu, ZC.(2012).Temperature dependence of electron-spin relaxation in a single InAs quantum dot at zero applied magnetic field.JOURNAL OF APPLIED PHYSICS,111(5),53524.
MLA	Dou, XM,et al."Temperature dependence of electron-spin relaxation in a single InAs quantum dot at zero applied magnetic field".JOURNAL OF APPLIED PHYSICS 111.5(2012):53524.

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