Knowledge Management System Of Institute of Semiconductors,CAS
Effect of Li-doping on the magnetic properties of ZnO with Zn vacancies | |
Gao, HX; Xia, JB | |
2012 | |
Source Publication | JOURNAL OF APPLIED PHYSICS
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Volume | 111Issue:9Pages:93902 |
Subject Area | 半导体物理 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2013-03-17 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/23577 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Gao, HX,Xia, JB. Effect of Li-doping on the magnetic properties of ZnO with Zn vacancies[J]. JOURNAL OF APPLIED PHYSICS,2012,111(9):93902. |
APA | Gao, HX,&Xia, JB.(2012).Effect of Li-doping on the magnetic properties of ZnO with Zn vacancies.JOURNAL OF APPLIED PHYSICS,111(9),93902. |
MLA | Gao, HX,et al."Effect of Li-doping on the magnetic properties of ZnO with Zn vacancies".JOURNAL OF APPLIED PHYSICS 111.9(2012):93902. |
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2012319.pdf(234KB) | 限制开放 | License | Application Full Text |
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