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Effect of hydrogen passivation on the electronic structure of ionic semiconductor nanostructures
Deng, HX; Li, SS; Li, JB; Wei, SH
2012
Source PublicationPHYSICAL REVIEW B
Volume85Issue:19Pages:195328
Subject Area半导体物理
Date Available2013-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23574
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Deng, HX,Li, SS,Li, JB,et al. Effect of hydrogen passivation on the electronic structure of ionic semiconductor nanostructures[J]. PHYSICAL REVIEW B,2012,85(19):195328.
APA Deng, HX,Li, SS,Li, JB,&Wei, SH.(2012).Effect of hydrogen passivation on the electronic structure of ionic semiconductor nanostructures.PHYSICAL REVIEW B,85(19),195328.
MLA Deng, HX,et al."Effect of hydrogen passivation on the electronic structure of ionic semiconductor nanostructures".PHYSICAL REVIEW B 85.19(2012):195328.
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