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Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)
Zhu, JJ; Fan, YM; Zhang, H; Lu, GJ; Wang, H; Zhao, DG; Jiang, DS; Liu, ZS; Zhang, SM; Chen, GF; Zhang, BS; Yang, H
2012
Source PublicationJOURNAL OF CRYSTAL GROWTH
Volume348Issue:1Pages:25-30
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2013-02-27
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23566
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Zhu, JJ,Fan, YM,Zhang, H,et al. Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)[J]. JOURNAL OF CRYSTAL GROWTH,2012,348(1):25-30.
APA Zhu, JJ.,Fan, YM.,Zhang, H.,Lu, GJ.,Wang, H.,...&Yang, H.(2012).Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD).JOURNAL OF CRYSTAL GROWTH,348(1),25-30.
MLA Zhu, JJ,et al."Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)".JOURNAL OF CRYSTAL GROWTH 348.1(2012):25-30.
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