SEMI OpenIR  > 纳米光电子实验室
Mid Wavelength Type II InAs/GaSb Superlattice Photodetector Using SiOxNy Passivation
Huang, JL; Ma, WQ; Cao, YL; Wei, Y; Zhang, YH; Cui, K; Deng, GR; Shi, YL
2012
Source PublicationJAPANESE JOURNAL OF APPLIED PHYSICS
Volume51Issue:7,Part 1Pages:74002
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2013-02-25
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23564
Collection纳米光电子实验室
Recommended Citation
GB/T 7714
Huang, JL,Ma, WQ,Cao, YL,et al. Mid Wavelength Type II InAs/GaSb Superlattice Photodetector Using SiOxNy Passivation[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2012,51(7,Part 1):74002.
APA Huang, JL.,Ma, WQ.,Cao, YL.,Wei, Y.,Zhang, YH.,...&Shi, YL.(2012).Mid Wavelength Type II InAs/GaSb Superlattice Photodetector Using SiOxNy Passivation.JAPANESE JOURNAL OF APPLIED PHYSICS,51(7,Part 1),74002.
MLA Huang, JL,et al."Mid Wavelength Type II InAs/GaSb Superlattice Photodetector Using SiOxNy Passivation".JAPANESE JOURNAL OF APPLIED PHYSICS 51.7,Part 1(2012):74002.
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