SEMI OpenIR  > 中科院半导体材料科学重点实验室
Characterization of 4H-SiC substrates and epilayers by Fourier transform infrared reflectance spectroscopy
Dong, L; Sun, GS; Zheng, L; Liu, XF; Zhang, F; Yan, GG; Zhao, WS; Wang, L; Li, XG; Wang, ZG
2012
Source PublicationCHINESE PHYSICS B
Volume21Issue:4Pages:47802
Subject Area半导体材料
Indexed BySCI
Date Available2013-02-07
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23554
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Dong, L,Sun, GS,Zheng, L,et al. Characterization of 4H-SiC substrates and epilayers by Fourier transform infrared reflectance spectroscopy[J]. CHINESE PHYSICS B,2012,21(4):47802.
APA Dong, L.,Sun, GS.,Zheng, L.,Liu, XF.,Zhang, F.,...&Wang, ZG.(2012).Characterization of 4H-SiC substrates and epilayers by Fourier transform infrared reflectance spectroscopy.CHINESE PHYSICS B,21(4),47802.
MLA Dong, L,et al."Characterization of 4H-SiC substrates and epilayers by Fourier transform infrared reflectance spectroscopy".CHINESE PHYSICS B 21.4(2012):47802.
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