SEMI OpenIR  > 中科院半导体材料科学重点实验室
Self-consistent simulation of carrier confinement characteristics in (AlyGa1-yN/AlN)SLs/GaN/(InxGa1-xN/GaN)MQW/GaN heterostructures
Ding, JQ; Wang, XL; Xiao, HL; Wang, CM; Yin, HB; Chen, H; Feng, C; Jiang, LJ
2012
Source PublicationJOURNAL OF ALLOYS AND COMPOUNDS
Volume523Pages:88-93
Subject Area半导体材料
Indexed BySCI
Date Available2013-02-07
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23553
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Ding, JQ,Wang, XL,Xiao, HL,et al. Self-consistent simulation of carrier confinement characteristics in (AlyGa1-yN/AlN)SLs/GaN/(InxGa1-xN/GaN)MQW/GaN heterostructures[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2012,523:88-93.
APA Ding, JQ.,Wang, XL.,Xiao, HL.,Wang, CM.,Yin, HB.,...&Jiang, LJ.(2012).Self-consistent simulation of carrier confinement characteristics in (AlyGa1-yN/AlN)SLs/GaN/(InxGa1-xN/GaN)MQW/GaN heterostructures.JOURNAL OF ALLOYS AND COMPOUNDS,523,88-93.
MLA Ding, JQ,et al."Self-consistent simulation of carrier confinement characteristics in (AlyGa1-yN/AlN)SLs/GaN/(InxGa1-xN/GaN)MQW/GaN heterostructures".JOURNAL OF ALLOYS AND COMPOUNDS 523(2012):88-93.
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