SEMI OpenIR  > 中科院半导体材料科学重点实验室
Molecular beam epitaxial growth and characterization of GaSb layers on GaAs (001) substrates
Li, YB; Zhang, Y; Zhang, YW; Wang, BQ; Zhu, ZP; Zeng, YP
2012
Source PublicationAPPLIED SURFACE SCIENCE
Volume258Issue:17Pages:6571-6575
Subject Area半导体材料
Indexed BySCI
Date Available2013-02-07
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23552
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Li, YB,Zhang, Y,Zhang, YW,et al. Molecular beam epitaxial growth and characterization of GaSb layers on GaAs (001) substrates[J]. APPLIED SURFACE SCIENCE,2012,258(17):6571-6575.
APA Li, YB,Zhang, Y,Zhang, YW,Wang, BQ,Zhu, ZP,&Zeng, YP.(2012).Molecular beam epitaxial growth and characterization of GaSb layers on GaAs (001) substrates.APPLIED SURFACE SCIENCE,258(17),6571-6575.
MLA Li, YB,et al."Molecular beam epitaxial growth and characterization of GaSb layers on GaAs (001) substrates".APPLIED SURFACE SCIENCE 258.17(2012):6571-6575.
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