SEMI OpenIR  > 半导体超晶格国家重点实验室
SPACE-CHARGE EFFECT IN UNINTENTIONALLY N-DOPED SILICON
Cong, KK; Ji, Y
2012
Source PublicationMODERN PHYSICS LETTERS B
Volume26Issue:8Pages:1250048
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2013-02-07
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23548
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Cong, KK,Ji, Y. SPACE-CHARGE EFFECT IN UNINTENTIONALLY N-DOPED SILICON[J]. MODERN PHYSICS LETTERS B,2012,26(8):1250048.
APA Cong, KK,&Ji, Y.(2012).SPACE-CHARGE EFFECT IN UNINTENTIONALLY N-DOPED SILICON.MODERN PHYSICS LETTERS B,26(8),1250048.
MLA Cong, KK,et al."SPACE-CHARGE EFFECT IN UNINTENTIONALLY N-DOPED SILICON".MODERN PHYSICS LETTERS B 26.8(2012):1250048.
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