SEMI OpenIR  > 中科院半导体材料科学重点实验室
Raman study on dislocation in high Al content AlxGa1-xN
Pan, X; Wang, XL; Xiao, HL; Wang, CM; Feng, C; Jiang, LJ; Yin, H; Chen, H
2012
Source PublicationEUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
Volume58Issue:1Pages:10102
Subject Area半导体材料
Indexed BySCI
Date Available2013-01-29
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23532
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Pan, X,Wang, XL,Xiao, HL,et al. Raman study on dislocation in high Al content AlxGa1-xN[J]. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,2012,58(1):10102.
APA Pan, X.,Wang, XL.,Xiao, HL.,Wang, CM.,Feng, C.,...&Chen, H.(2012).Raman study on dislocation in high Al content AlxGa1-xN.EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,58(1),10102.
MLA Pan, X,et al."Raman study on dislocation in high Al content AlxGa1-xN".EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS 58.1(2012):10102.
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