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碳化硅PIN微结构的制作方法; 碳化硅PIN微结构的制作方法
孙国胜; 吴海雷; 郑柳; 刘兴昉; 王雷; 赵万顺; 闫果果
Rights Holder中国科学院半导体研究所
Date Available2012-08-29 ; 2012-08-29 ; 2012-08-29
Country中国
Subtype发明
Abstract 一种碳化硅PiN微结构的制作方法,包括如下步骤:步骤1:取一n型碳化硅衬底;步骤2:对n型碳化硅衬底的表面进行氢气刻蚀;步骤3:在n型碳化硅衬底上生长n-型变浓度缓冲层;步骤4:在n-型变浓度缓冲层上外延生长本征外延层;步骤5:采用离子注入法,在本征外延层上制备P型层;步骤6:退火,完成碳化硅PIN微结构的制作。
metadata_83半导体材料科学中心
Application Date2011-06-28
Patent NumberCN102254798A
Language中文
Status公开
Application Number CN201110177841.6
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/23315
Collection半导体材料科学中心
Recommended Citation
GB/T 7714
孙国胜,吴海雷,郑柳,等. 碳化硅PIN微结构的制作方法, 碳化硅PIN微结构的制作方法. CN102254798A.
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