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阳极氧化铝工艺用于提高LED的出光效率
潘岭峰; 李琪; 刘志强; 王晓峰; 伊晓燕; 王良臣; 王军喜
2011
Source Publication半导体技术
Volume36Issue:4Pages:283-286
Abstract使用纳米尺度的多孔阳极氧化铝(anodic aluminum oxide,AAO)作为刻蚀掩膜,刻蚀氧化铟锡(indium-tin oxide,ITO),形成纳米图形化表面,对于发光二极管的出光效率有明显的提升作用.AAO纳米掩膜的制备已广为报道,是纳电子学研究中常用的模板之一,工艺简单易行,可控性好.使用电感耦合反应离子刻蚀方法成功将纳米多孔结构转移到ITO上,形成ITO纳米结构.纳米图形化结构的引入使得器件有效减小了内部的全反射,在电压没有大幅提高,注入电流350 mA时,光学输出提高了7%.纳米尺度粗化结构LED与传统结构LED对比,提升了器件的外量子效率
metadata_83中科院半导体照明研发中心
Subject Area半导体材料
Funding Organization基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:4179694
Date Available2012-07-17
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23302
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
潘岭峰,李琪,刘志强,等. 阳极氧化铝工艺用于提高LED的出光效率[J]. 半导体技术,2011,36(4):283-286.
APA 潘岭峰.,李琪.,刘志强.,王晓峰.,伊晓燕.,...&王军喜.(2011).阳极氧化铝工艺用于提高LED的出光效率.半导体技术,36(4),283-286.
MLA 潘岭峰,et al."阳极氧化铝工艺用于提高LED的出光效率".半导体技术 36.4(2011):283-286.
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