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周期换向脉冲电沉积-硒化法制备铜铟镓硒薄膜
曹洁; 曲胜春; 刘孔; 王占国
2011
Source Publication功能材料与器件学报
Volume17Issue:2Pages:187-194
Abstract采用周期换向脉冲电沉积法于Mo/玻璃及ITO/玻璃衬底上制备铜铟镓硒薄膜。Mo/玻璃或ITO/玻璃为工作电极,饱和甘汞(SCE)为参比电极,大面积铂片作为阳极构成三电极体系,以氯化铜,三氯化铟,三氯化镓和亚硒酸的水溶液为电解液,制备Cu-In-Ga-Se合金预制膜,随后在硒蒸气中进行硒化处理,得到了黄铜矿结构的CuInGaSe2(CIGS)薄膜.分别用SEM,XRD和UV-吸收分析了合金预制膜和CuInGaSe2薄膜的表面形貌、相组成及紫外-可见吸收特性。结果表明,周期换向脉冲电沉积法可以制备表面平整、均匀致密的Cu-In-Ga-Se合金薄膜;利用脉冲电压的占空比可以提高预制膜中的In元素的比例,且随着In含量的增加,CIGS薄膜的结晶性变好;适当延长硒化退火的时间,可以使薄膜晶粒大小均匀,减小内应力,使薄膜的光吸收率提高,以利于制备更高效率的CIGS薄膜太阳电池.
metadata_83中科院半导体材料科学重点实验室
Subject Area半导体材料
Funding Organization973项目,国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:4196446
Date Available2012-07-17
Citation statistics
Cited Times:3[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23298
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
曹洁,曲胜春,刘孔,等. 周期换向脉冲电沉积-硒化法制备铜铟镓硒薄膜[J]. 功能材料与器件学报,2011,17(2):187-194.
APA 曹洁,曲胜春,刘孔,&王占国.(2011).周期换向脉冲电沉积-硒化法制备铜铟镓硒薄膜.功能材料与器件学报,17(2),187-194.
MLA 曹洁,et al."周期换向脉冲电沉积-硒化法制备铜铟镓硒薄膜".功能材料与器件学报 17.2(2011):187-194.
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