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SoI基微环谐振可调谐滤波器
姜宏伟; 吴远大
2011
Source Publication光电子·激光
Volume22Issue:6Pages:813-815
Abstract采用电子束光刻和ICP刻蚀等工艺制作出绝缘体上Si(SoI)基纳米线波导微环谐振(MRR)滤波器,波导截面尺寸为300 nm×320 nm,微环半径为5μm。测试结果表明,器件的自由频谱宽度(FSR)为16.8 nm,1.55μm波长附近的消光比(ER)为18.1 dB。通过对MRR滤波器进行热光调制,在21.4~60.0℃温度范围内实现了4.8 nm波长范围的可调谐滤波特性,热光调谐效率达到0.12 nm /℃。
metadata_83集成光电子学国家重点实验室
Subject Area光电子学
Funding Organization国家“863”计划资助项目,国家自然科学基金资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:4221498
Date Available2012-07-17
Citation statistics
Cited Times:8[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23285
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
姜宏伟,吴远大. SoI基微环谐振可调谐滤波器[J]. 光电子·激光,2011,22(6):813-815.
APA 姜宏伟,&吴远大.(2011).SoI基微环谐振可调谐滤波器.光电子·激光,22(6),813-815.
MLA 姜宏伟,et al."SoI基微环谐振可调谐滤波器".光电子·激光 22.6(2011):813-815.
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